Semiconductor integrated circuit

ABSTRACT

In a monolithic active matrix circuit that uses offset-gate TFTs in which the gate electrode is offset from the source and drain regions or TFTs whose gate insulating film is formed by vapor deposition, not only an active matrix circuit but also a drive circuit therefor is formed by using P-channel TFTs.

This application is a Divisional application of Ser. No. 08/688,829,filed Jul. 31, 1996 now U.S. Pat. No. 5,889,291, which is a Continuationapplication of Ser. No. 08/423,085, filed Apr. 18, 1995, now abandoned.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor integrated circuit thatis composed of thin-film semiconductor elements. The inventionparticularly relates to a monolithic active matrix devices, such as aliquid crystal display device and a dynamic RAM (DRAM), which have amatrix structure and in which an active matrix circuit including MOS orMIS (metal-insulator-semiconductor) field-effect elements (generallycalled MOS elements) that serve as switching elements for the matrixstructure and a drive circuit for driving the active matrix circuit areformed on a single substrate. Further, the invention particularlyrelates to a device which uses thin-film transistors that are formed asMOS elements on an insulative surface at a relatively low temperature.

In recent years, in display devices having a matrix structure such as aliquid crystal display, studies have been made intensively of a matrixcircuit (active matrix circuit) that uses thin-film transistors (TFT;insulated-gate semiconductor elements having thin-film active layers orregions) for switching of respective elements. In particular, amonolithic active matrix device in which not only an active matrixcircuit but also peripheral circuits for driving it are formed on asingle substrate using TFTs now attracts much attention. Since themonolithic active matrix device does not need connection of a largenumber of terminals, it is expected that the matrix density is increasedand the production yield is improved.

To attain such purposes, it is necessary to use TFTs in whichcrystalline silicon is used for active layers, because the drive circuitis required to operate at very high speed.

To obtain such TFTs, the conventional semiconductor manufacturingtechnologies may be employed as they are, in which case, however, asubstrate material should endure a high temperature of more than 900° C.However, such a material is limited to quarts glass, with which thesubstrate cost is very high when it is of a large area.

To use a less expensive substrate, the maximum temperature of amanufacturing process should be reduced to lower than 800° C.,preferably lower than 600° C. Even where a manufacturer can afford touse an expensive substrate, it is in some cases necessary for amanufacturing process to be performed at lower temperatures due to heatresistant performance of other materials constituting the circuits. Inthis case, active layers are formed by crystallizing amorphous siliconby, for instance, long-term thermal annealing at a temperature lowerthan 800° C., or optical annealing (laser annealing etc.) in whichamorphous silicon is instantly crystallized by application ofhigh-intensity light such as laser light. On the other hand, becausethermal oxidation films as used in ordinary semiconductor processescannot be used as a gate insulating film, a film of a silicon dioxide,silicon nitride, silicon oxy-nitride, or a like material is used that isformed at a temperature lower than 800° C. by vapor phase depositionsuch as plasma CVD, atmospheric pressure CVD, or sputtering.

On the other hand, TFTs using non-crystalline silicon such aspolycrystalline silicon has a problem that a large drain current (leakcurrent) flows when the gate electrode is reversely biased. It is knownthat this disadvantage can be much lessened by designing TFTs such thatthe gate electrode does not overlap with the drain (offset state). Thistype of transistor is called an offset-gate transistor. In the past, itwas impossible to realize such an offset state with superiorreproducibility by a photolithographic process. Japanese UnexaminedPatent Publication Nos. Hei. 5-114724 and Hei. 5-267167 disclosesolutions to this problem. That is, an offset can be formed by properlyutilizing an increased gate portion obtained by anodic oxidation of thegate electrode.

Even if the offset gate is not intended, an anodic oxide film formedaround the gate electrode provides an advantage of preventing hillocksin a subsequent heating process (for instance, a film deposition processby laser illumination or CVD), for instance, in the case where the gateelectrode is formed by a material of insufficient heat resistance suchas aluminum.

However, an insulative film formed by vapor deposition suffers from lowfilm quality. Further, due to insufficient junction performance of theboundary between the surface of a silicon film and a gate insulatingfilm, there occur many charge trap centers (particularly electron trapcenters) at the boundary between the silicon film and the insulatingfilm and in the insulating film. Therefore, when TFTs using such amaterial are used for a long time, many electrons are trapped by thetrap centers, deteriorating characteristics of the TFTs.

Further, the anodic oxide film that is left for the offset formationsimilarly has many trap levels; in particular, an aluminum oxide filmformed by anodic oxidation of aluminum likely traps electrons. This willdeteriorate characteristics of TFTs when they are used for a long time.

Specifically, in an N-channel TFT, a weak-P-type region that is formedat a boundary portion between the drain and the channel forming regionby trapped electrons (see FIG. 7(A)) obstructs a drain current.

The formation of such a weak-P-type region is remarkable in anoffset-gate TFT due to the following reason. In an actual operation, aweak-P-type region formed right under the gate electrode can be madesmaller by voltage application to the gate electrode. However, because aweak-P-type region formed in the offset region is not much influenced bythe gate electrode and is far away from the drain region, it iscompletely uncontrollable.

An anodic oxide film formed around the gate electrode has similarproblems. In particular, when the drain voltage is low, an inversionlayer (i.e., a channel) that should extend from the source to the drainis obstructed by a weak-P-type region. In addition, because of the lowdrain voltage, carriers (electrons because an N-channel TFT is nowconsidered) moving through the channel-forming region has a low speed.Thus, the drain current is smaller than in the ordinary state (see FIG.7(B)).

When the drain voltage is sufficiently high, the inversion layer itselfretreats even in the normal state and electrons move at high speed.Therefore, the existence of a weak-P-type region is not a seriousproblem, but there can be obtained characteristics equivalent to thosein the normal state.

The above-described phenomenon means a variation of the thresholdvoltage of an N-channel TFT. That is, the above-described N-channel TFTcannot be used for applications that require the threshold voltage to bestable, for instance, switching elements in an active matrix circuit oranalog switch elements in peripheral drive circuits for the activematrix circuit.

In a P-channel TFT, in which trapped electrons simply adds a regionhaving the same conductivity type as the drain in the channel region,there occurs no serious deterioration of characteristics.

Due to the above problems, a complementary (CMOS) circuit composed ofN-channel TFTs and P-channel TFTs has a problem that it does not workproperly after long-term usage because of deterioration of the N-channelTFTs. In a monolithic active matrix circuit, analog switches are neededat output ends of an active matrix circuit and a source driver. Theabove problems should be addressed in forming such analog switches.Further, in a monolithic active matrix circuit, a CMOS circuit isusually used in a logic circuit of peripheral drive circuits, asdescribed in U.S. Pat. No. 4,582,395. The above-described problems ofdeterioration should be considered in forming such a monolithic activematrix circuit.

SUMMARY OF THE INVENTION

The present invention is intended to provide solutions to the difficultproblems described above.

In particular, the above-described problems should be solved in thefirst place in a monolithic active matrix circuit, which is anintegrated circuit having, on a single substrate, an active matrixcircuit for performing image display by applying an analog electricfield between opposed electrodes between which a material, such as aliquid crystal, whose transmittance or reflectance is varied byapplication of an electric field is inserted and peripheral circuits fordriving the active matrix circuit.

According to a first aspect of the invention, all the transistorsconstituting a monolithic active matrix circuit are P-channel TFTs, andthe TFTs constituting an active matrix circuit are of an offset-gatetype. In particular, the offset-gate TFTs are produced by coating thegate electrodes with an anodic oxide film by subjecting those to theanodic oxidation as disclosed in Japanese Unexamined Patent PublicationNo. Hei. 5-114724 or Hei. 5-267167.

According to a second aspect of the invention, all the TFTs areP-channel TFTs in a monolithic active matrix circuit in which a gateinsulating film is formed at a temperature not higher than 800° C.

According to a third aspect of the invention, all the transistorsconstituting a monolithic active matrix circuit are P-channel TFTs, andat least one of the TFTs constituting a drive circuit for an activematrix circuit is of an offset-gate type. In this case, as in the caseof the first aspect, the offset TFTs may be formed by subjecting thegate electrodes to the anodic oxidation.

According to a fourth aspect of the invention, in a monolithic activematrix circuit, an anodic oxide film of a gate electrode is left on atleast a side face of at least one of TFTs that constitute an activematrix circuit or a peripheral drive circuit therefor, and all thetransistors of the monolithic active matrix circuit are P-channel TFTs.

A description will be made of the operation of the invention. It isnatural to use offset-gate TFTs having an advantage of a small leakcurrent as TFTs constituting an active matrix circuit which are requiredto have a high charge holding ability. However, if the offset-gate TFTsare used, the active matrix circuit is deteriorated because aweak-P-type region formed in an N-channel TFT cannot be controlled fromthe gate electrode or the drain region, as described above. This isfatal to devices, such as the active matrix circuit, that are expectedto have sufficient characteristics for analog switches. Even in theother circuits, the use of an N-channel TFT is not preferable in termsof deterioration.

As is understood from the above, it is necessary that all the TFTs be ofa P-channel type in a monolithic active matrix circuit that usesoffset-gate TFTs in an active matrix circuit (first aspect of theinvention). With this configuration, superior circuit characteristicsand high reliability have been obtained.

As described above, in a monolithic active matrix circuit, manyelectrons are trapped in a TFT using a gate insulating film that wasformed at a temperature not higher than 800° C., so that characteristicsof an N-channel TFT are greatly deteriorated. Therefore, it is necessarythat all the TFTs be of a P-channel type in a monolithic active matrixcircuit using TFTs that have a gate insulating film formed at atemperature not higher than 800° C. (second aspect of the invention).With this configuration, superior circuit characteristics and highreliability have been obtained.

It is natural to use offset-gate TFTs having an advantage of a smallleak current as TFTs constituting a switching circuit of a peripheraldrive circuit such as an analog buffer circuit which TFTs are requiredto have a high charge holding ability. However, if the offset-gate TFTsare used, the peripheral drive circuit is deteriorated because aweak-P-type region formed in an N-channel TFT cannot be controlled fromthe gate electrode or the drain region, as described above. This isfatal to devices, such as the analog buffer circuit, in which thestability of the threshold voltage is most necessary. Even in the othercircuits, the use of an N-channel TFT is not preferable in terms ofdeterioration.

As is understood from the above, it is necessary that all the TFTs be ofa P-channel type in a monolithic active matrix circuit that usesoffset-gate TFTs in a peripheral drive circuit such as an analog buffercircuit (third aspect of the invention). With this configuration,superior circuit characteristics and high reliability have beenobtained.

As described above, irrespective of an object of forming offset gates,coating gate electrodes with an anodic oxide film is very advantageous.However, the anodic oxide film likely traps charges. In particular, ananodic oxide film left on the side face of a gate electrode, which isclose to a gate insulating film, likely traps electrodes and electronstrapped at such locations greatly affect the characteristics when TFTsare of an N-channel type. Therefore, it is necessary that all the TFTsbe of a P-channel type in a monolithic active matrix circuit having TFTsin which an anodic oxide film is left on the side face of the gateelectrode (fourth aspect of the invention). With this configuration,superior circuit characteristics and high reliability have beenobtained.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1(A)-1(E) are sectional views schematically showing an integratedcircuit manufacturing process according to a first embodiment of thepresent invention;

FIGS. 2(A)-2(E) are sectional views schematically showing an integratedcircuit manufacturing process according to a second embodiment of theinvention;

FIGS. 3(A)-3(C) are sectional views schematically showing integratedcircuits according to a third embodiment of the invention;

FIG. 4 is a circuit diagram showing a shift register used in anintegrated circuit according to the third embodiment of the invention;

FIG. 5 is a circuit diagram showing a shift register used in anintegrated circuit according to the first embodiment of the invention;

FIG. 6 is a circuit diagram showing a shift register used in anintegrated circuit according to the second embodiment of the invention;

FIGS. 7(A) and 7(B) illustrate deteriorations of a conventionalN-channel TFT;

FIG. 8 is a block diagram showing a monolithic liquid crystal displayaccording to the first embodiment of the invention;

FIG. 9 is a block diagram showing a system according to a fourthembodiment of the invention;

FIG. 10 shows a specific configuration of the fourth embodiment; and

FIGS. 11 and 12 show examples of configurations obtained by a COG methodin the fourth embodiment.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiment 1

A description will be made of an embodiment in which a monolithic liquidcrystal display is produced according to the present invention. FIG. 8is a block diagram showing a monolithic liquid crystal display accordingto this embodiment. All of TFTs used in component circuits of a liquidcrystal display, i.e., a shift register X (for a source driver), a shiftregister Y (for a gate driver), analog switches of the source driver,and other peripheral circuits and an active matrix circuit are of aP-channel type. FIG. 5 is a circuit diagram showing the shift register(one stage) of this embodiment.

This circuit requires three power lines V_(DD), V_(SS) and V_(GG), whereV_(DD)>V_(SS). An optimum value of V_(GG) is determined consideringcharacteristics of the TFTs and, preferably, is approximately equal toor smaller than V_(SS).

Referring to FIGS. 1(A)-1(E), a description will be made of a circuitmanufacturing process of the above monolithic liquid crystal display. Itis desirable that a substrate 101 be made of low-alkali glass ornon-alkali glass such as Corning 7059 or NA35 or NA45 of NH TechnoglassCorp. To prevent the substrate from contracting in heating steps in aTFT manufacturing process, it may be subjected to a proper heattreatment in advance. A silicon dioxide film 102 was formed as anundercoat film on the substrate 101 at a thickness of 1,000-5,000 Å, forexample, 2,000 Å.

An amorphous silicon film was further deposited at a thickness of300-1,500 Å, for instance, 500 Å, and crystallized by thermal annealingat 500-600° C. This step may be performed by adding a very smallquantity of a metal element, such as nickel, that facilitates thecrystallization, to reduce the crystallization temperature, to therebyshorten the thermal annealing time. For example, when nickel was addedby more than 1×10¹⁸ atoms/cm³, the crystallization was completed at 550°C. in 4-8 hours. After the crystallization step, crystallinity may beimproved by irradiating laser light or equivalent high-intensity light.

In the crystallization step, naturally the crystallization may beeffected by optical annealing in which the amorphous silicon film isirradiated with laser light or equivalent high-intensity light.

Then, island-like regions 103-105 were formed by etching thecrystallized silicon film. The regions 103 and 104 are used for TFTsthat constitute the peripheral drive circuits (source driver and gatedriver), and the region 105 is used for a TFT that constitutes theactive matrix circuit.

Subsequently, a silicon dioxide film 106 was deposited at a thickness of1,000-1,500 Å, for instance, 1,200 Å by plasma CVD, and WAS made a gateinsulating film. An aluminum film was deposited at a thickness of3,000-8,000 Å, for instance, 5,000 Å by sputtering, and then etched intogate electrodes 107-109 (see FIG. 1(A)).

Then, anodic oxide films 110-112 were formed on the top and side facesof the respective gate electrodes 107-109 by applying a voltage in anelectrolyte under the same conditions as described in JapaneseUnexamined Patent Publication Nos. Hei. 5-114724 and Hei. 5-267167 (seeFIG. 1(B)). The thickness of the anodic oxide films 110-112 was1,500-3,000 Å, for instance, 2,000 Å. This thickness may be varied forvarious uses of TFTs, i.e., for TFTs used in the shift register, TFTsused in the analog buffer, TFTs used in the active matrix circuit, andTFTs for other circuits, because the thickness of the anodic oxide filmis a factor of determining the width of the offset region as describedin the publication No. Hei. 5-114724 and the TFT characteristics dependon the offset width.

After wiring lines connected to the gate electrodes 107-109 were cutwhen necessary, boron was doped through the entire surface by ion doping(also called plasma doping). A doping apparatus produced by NissinElectric Co., Ltd. was used. The dose was 2×10¹⁴ to 5×10¹⁵ atoms/cm²,for instance, 5×10¹⁴ atoms/cm². The acceleration voltage was set at30-80 kV, for instance, 65 kV, to implant ions into the silicon films103-105 through the gate insulating film 106.

After the doping, doped boron was activated by irradiating the entiresurface with laser light. A KrF or XeCl excimer laser was used with anenergy density of 150-350 mJ/cm², for instance, 200 mJ/cm². It waspossible to reduce the laser energy density by heating the substrate to200-400° C. Thus, P-type regions (sources and drains) 113-115 wereformed in a self-aligned manner by implanting boron into the siliconregions 103-105 using the gate electrodes 107-109 and the anodic oxidefilms 110-112 as a mask (see FIG. 1(C)).

Then, a silicon dioxide film or a silicon nitride film 116 was depositedas an interlayer insulating film over the entire surface at a thicknessof 3,000-8,000 Å, for instance, 5,000 Å. And a transparent conductivefilm, for instance, an indium tin oxide (ITO) film was deposited bysputtering at a thickness of 500-1,500 Å, for instance, 500 Å. A pixelelectrode 117 was formed in the active matrix circuit area (pixel area)by etching the transparent conductive film (see FIG. 1(D)).

After contact holes for the sources and drains 113-115 of the respectiveTFTs and those (not shown) for the gate electrodes 107-109 were formed,electrodes and wiring lines 118-122 were formed in the form of amulti-layer film of a titanium nitride film and an aluminum film (seeFIG. 1(E)). In the above manner, TFTs 123 and 124 (see FIG. 5) wereformed in the peripheral drive circuit area and a TFT 125 was formed inthe pixel area (see FIG. 8). All of these TFTs are of a P-channel type.

Embodiment 2

A description will be made of an embodiment in which another monolithicliquid crystal display is produced according to the invention. A blockdiagram of a monolithic liquid crystal display of this embodiment is thesame as that of FIG. 8. FIG. 6 is a circuit diagram showing a shiftregister (one stage) of this embodiment. While all the TFTs are of aP-channel type, this embodiment has a feature that depletion type TFTsare used as loads in addition to enhancement type TFTs. In this circuit,only two power lines V_(DD) and V_(SS) are used; that is, the power lineV_(GG) of the first embodiment is not necessary. Therefore, thisembodiment is preferable in terms of the circuit integration. Theoperation speed of this embodiment is generally faster than the firstembodiment. The condition V_(DD)>V_(SS) should also be satisfied in thisembodiment.

Referring to FIGS. 2(A)-2(E), a circuit manufacturing process of theabove monolithic liquid crystal display will be described. A substrate201 made of non-alkali glass was used. A silicon dioxide film 202 wasdeposited as an undercoat film on the substrate 201 at a thickness of1,000-5,000 Å, for instance, 2,000 Å.

Then, an amorphous silicon film 203 including a conductivity-impartingelement such as boron or phosphorus at as low a concentration aspossible was deposited at a thickness of 300-1,500 Å, for instance, 500Å. A silicon dioxide film 204 was deposited thereon at a thickness of1,000-3,000 Å, for instance, 2,000 Å, and was masked with a photoresist205. The silicon dioxide film 204 was formed to prevent the surface ofthe amorphous silicon film from being roughened by implantation of boronions.

Subsequently, boron was selectively introduced into the silicon film 203by ion doping or ion implantation. In this embodiment, a weak-P-typeregion 206 was formed by introducing boron by ion doping in which theacceleration voltage was 65 kV and the dose was 1×10¹³ to 2×10¹⁴atoms/cm² (see FIG. 2(A)). A depletion type TFT would be formed in thisregion.

After the photoresist mask 205 and the silicon dioxide film 204 wereremoved, the amorphous silicon film 202 was crystallized by thermalannealing or laser light irradiation.

The crystallized silicon film was then etched into island-like regions207-209. The regions 207 and 208 are used for TFTs that constitute theperipheral drive circuits (source driver and gate driver), and theregion 209 is used for a TFT that constitutes the active matrix circuit.The region 207 is used for a depletion type TFT, and the regions 208 and209 are used for enhancement type TFTs.

After a gate insulating film was deposited, gate electrodes 210-212whose top and side faces were covered with an anodic oxide film wereformed in the same manner as in the first embodiment (see FIG. 2(B)).

After wiring lines connected to the gate electrodes 210-212 were cutwhen necessary, boron was doped over the entire surface by ion doping.The dose was 5×10¹⁴ atoms/cm². The acceleration voltage was set at 65kV. After the doping, doped boron was activated by irradiating theentire surface with laser light. Thus, P-type regions (sources anddrains) 213-215 were formed in a self-aligned manner by implanting boroninto the silicon regions 207-209 using the gate electrodes 210-212 andthe anodic oxide films as a mask (see FIG. 2(C)).

Then, a silicon dioxide film or a silicon nitride film 216 was depositedas an interlayer insulating film over the entire surface at a thicknessof 5,000 Å. A pixel electrode 217 was formed in the active matrixcircuit area (pixel area) by use of a transparent conductive film (seeFIG. 2(D)).

After contact holes for the sources and drains 213-215 of the respectiveTFTs and those (not shown) for the gate electrodes 210-212 were formed,electrodes and wiring lines 218-222 were formed in the form of amulti-layer film of a titanium nitride film and an aluminum film (seeFIG. 2(E)) In the above manner, TFTs 223 and 224 (see FIG. 6) wereformed in the peripheral drive circuit area and a TFT 225 was formed inthe pixel area. All of these TFTs are of a P-channel type. The TFT 223is a depletion type TFT having a weak-P-type channel-forming region. Onthe other hand, the TFTs 224 and 225 are enhancement type TFTs having anintrinsic or substantially intrinsic channel-forming region.

Embodiment 3

A description will be made of an embodiment in which another monolithicliquid crystal display is produced according to the invention. A blockdiagram of a monolithic liquid crystal display of this embodiment is thesame as that of FIG. 8. FIG. 4 is a circuit diagram showing a shiftregister (one stage) of this embodiment. While all the TFTs are of aP-channel type, this embodiment has a feature that resistors are used asloads. In this circuit, only two power lines V_(DD) and V_(SS) are usedas in the case of the second embodiment. The operation speed of thisembodiment is generally faster than the first embodiment. The conditionV_(DD)>V_(SS) should also be satisfied in this embodiment.

FIGS. 3(A)-3(C) are sectional views of the above-type of circuits, whichare manufactured by using the integrated circuit manufacturingtechnologies as described in the first and second embodiments. Detailsof a manufacturing process are omitted here.

Referring to FIG. 3(A), a region 301 is a resistor, a region 302 is aTFT of the peripheral drive circuit, and a region 303 is a TFT of thepixel area. An intrinsic silicon region of the region 301 is used as aresistor. This type of resistor can be formed such that in the processof forming the TFT 123 of FIG. 1(E), the gate electrode 107 is removedafter the doping for forming the source and drain 113 is performed.However, in this example, because intrinsic silicon is used as theresistor, the resistance value is generally large; usually more than 1MΩ. Therefore, this example has a problem of a low circuit responsespeed.

Referring to FIG. 3(B), a region 304 is a resistor, a region 305 is aTFT of the peripheral drive circuit, and a region 306 is a TFT of thepixel area. A weak-P-type silicon region of the region 304 is used as aresistor. This type of resistor can be formed such that in the processof forming the TFT 223 of FIG. 2(E), the gate electrode 210 is removedafter the doping for forming the source and drain 213 is performed. Inthis example, because weak-P-type silicon is used as the resistor, theresistance value is usually about 100 kΩ.

Referring to FIG. 3(C), a region 307 is a resistor, a region 308 is aTFT of the peripheral drive circuit, and a region 309 is a TFT of thepixel area. A P-type silicon region of the region 307 is used as aresistor. This type of resistor can be formed such that in the processof forming the TFT 123 of FIG. 1(E), the gate electrode 107 is removedand then boron doping is performed. However, in this example, becauseP-type silicon is used as the resistor, the resistance is generallysmall; usually less than 10 kΩ. Therefore, this example has a problem oflarge power consumption.

The structure of FIG. 3(C) can be formed in the step of cutting thewiring lines connected to the gate electrodes between the step (forinstance, the step of FIG. 1(B)) of forming the gate electrodes andperforming the anodic oxidation and the boron doping step (FIG. 1(C)).However, to form the structures of FIGS. 3(A) and 3(B), onephotolithographic process should be added to remove the gate electrodeafter the doping.

Embodiment 4

The first to third embodiments are directed only to the monolithicactive matrix liquid crystal display. It is apparently possible toconstruct a more advanced system by using the active matrix liquidcrystal display thus formed. FIG. 9 is a block diagram showing anexample of such a system.

In the example of FIG. 9, the reduction in size, weight and thickness isattained by fixing semiconductor chips that are usually mounted on acomputer main board on at least one of a pair of substrates of a liquidcrystal display which substrates hold a liquid crystal. In particular,the above chips are fixed on the substrate having an active matrixcircuit. The invention has a disadvantage that since P-channel TFTs isused in an active matrix circuit and peripheral drive circuits, thepower consumption is larger than in the case of using ordinary CMOSperipheral drive circuits. Therefore, in the system under discussion,the chips other than the liquid crystal display panel should use CMOStransistors, to reduce the power consumption. The substrate having theactive matrix circuit uses the monolithic active matrix circuit of theinvention.

A description will be made of the system of FIG. 9. A substrate 15 alsoserves as a substrate of a liquid crystal display. An active matrixcircuit 14 having a large number of pixels each including a TFT 11, apixel electrode 12 and an auxiliary capacitor 13, and an Xdecoder/driver, a Y decoder/driver and an XY branching circuit fordriving the active matrix circuit are formed on the substrate 15 byusing TFTs.

In this embodiment, other chips are additionally mounted on thesubstrate 15. These chips are connected to the circuits on the substrate15 by wire bonding, a COG (chip one glass) method, or some other means.In FIG. 9, a correction memory, a memory, a CPU, and an input port arechips that are mounted in such a manner. Other various chips may bemounted on the substrate 15.

In FIG. 9, the input port is a circuit for reading an externally inputsignal. The correction memory is a memory for correcting an input signaletc. in accordance with the active matrix panel, and is thereforededicated to the panel. More specifically, the correction memory is anonvolatile memory that contains information specific to each pixel, andserves to effect correction for each pixel. Where a point defect existsat a certain pixel of an electro-optical device, signals corrected forthe defective pixel are supplied to pixels adjacent thereto, to therebycompensate for the point defect and make it less discernible. Where acertain pixel is darker than adjacent pixels, a larger signal issupplied to that pixel to make its brightness equal to that of theadjacent pixels. Since the information on pixel defects is differentfrom one panel to another, the information stored in the correctionmemory varies with the panel.

The CPU and the memory have the same functions as those used in ordinarycomputers. In particular, the memory has, as a RAM, an image memorycorresponding to the pixels. All of these chips are of a CMOS type.

FIG. 10 shows an example of a specific configuration of this embodiment.Substrates 19 and 20 were opposed to each other, and a liquid crystalwas interposed between those substrates. An active matrix circuit 21 andperipheral drive circuits 22-24 for driving it were formed on thesubstrate 20 by using TFTs. A main memory chip 26, an MPU(microprocessing unit) 27, a correction memory 28 were bonded to thesurface on which the above circuits are formed, and these chips wereconnected to the circuits on the substrate 20. For example, when thechips were to be connected by a COG (chip on glass) method, wiring linesas denoted by 29 in FIG. 10 were formed in a fixing portion 25 on thesubstrate 20.

FIGS. 11 and 12 show specific shapes of contacts. In the method of FIG.11, a conductive bump 34 provided at an electrode portion 33 of a chip32 was brought into contact with a wiring line 31 on a substrate 30, andan organic resin 35 was introduced into a space between the chip 32 andthe substrate 30 for fixing those to each other. The bump 34 may be madeof gold formed by electroless plating.

In the method of FIG. 12, a chip 42 and a substrate 40 were bonded eachother with an organic resin in which conductive particles (for example,gold particles) 44 were dispersed. The chip 42 was connected to thecircuits by contacting an electrode portion 43 of the chip 42 and awiring line 41 on the substrate to the conductive particles 44 existingtherebetween. The organic resin used for the bonding was of an opticalsetting type, thermosetting type, or natural setting type. The liquidcrystal may be injected into the liquid crystal display after the chipbonding.

Even the CPU and the memory were formed on the liquid crystal displaysubstrate by the above process, so that an electronic device such as asimple personal computer could be constructed on a single substrate.

The chips may be connected to the circuits by a known wire bondingmethod.

The invention can improve the reliability of the monolithic activematrix circuit. Further, the invention can make the manufacturingprocess simpler than the process in the case of forming an ordinary CMOScircuit. For example, a photolithographic step for doping a differentkind of impurities and a step of implanting N-type impurities, which arenecessary in forming a CMOS circuit, are eliminated in the firstembodiment.

The second embodiment needs the same number of steps as in the case offorming an ordinary CMOS circuit, because a photolithographic step and adoping step are needed to form the weak-P-type region. However, where aphotoresist or the like is used as a doping mask and ions are doped at ahigh dose, a long-term ashing step is usually needed because ofdifficulty in removing the carbonized photoresist. In contrast, in thesecond embodiment, the dose itself is low and the photoresist 205 can beremoved by a lift-off method by etching the silicon dioxide film 204(see FIG. 2(A)). Therefore, the photoresist mask can be removed moreeasily after the doping than in the process of forming an ordinary CMOScircuit.

As described above, the invention is useful from the industrial point ofview.

What is claimed is:
 1. A method of manufacturing a semiconductor devicecomprising at least one first P-channel thin film transistor forswitching a pixel electrode, and a driver circuit including at least twosecond P-channel thin film transistors for driving said first P-channelthin film transistor, said method comprising the steps of: forming asemiconductor film comprising silicon on an insulating surface; formingan insulating film on said semiconductor film; selectively introducingan impurity comprising boron into a selected portion of saidsemiconductor film through said insulating film by ion doping; removingsaid insulating film after the introduction of said impurity;crystallizing said semiconductor film after the introduction of saidimpurity; patterning said semiconductor film into at least one firstsemiconductor island to form said first P-channel thin film transistorand at least two second semiconductor islands to form said secondP-channel thin film transistor, wherein only one of said two secondsemiconductor islands is included in said portion of the semiconductorfilm so that a channel region of said only one of the two second thinfilm transistor is doped with said boron while a channel region of theother one of the two second thin film transistors is not doped with saidboron.
 2. The method according to claim 1 wherein said insulating filmhas a thickness of 1,000 to 3,000.
 3. The method according to claim 1wherein said semiconductor device is a liquid crystal device.
 4. Themethod according to claim 1 wherein the crystallizing step is performedby laser irradiation.
 5. The method according to claim 1 wherein saidimpurity is introduced at a dose of 1×10¹³ to 2×10¹⁴ atoms/cm².
 6. Amethod of manufacturing a semiconductor device comprising at least onefirst P-channel thin film transistor for switching a pixel electrode,and a driver circuit including at least two second P-channel thin filmtransistors for driving said first P-channel thin film transistor, saidmethod comprising the steps of: forming a semiconductor film comprisingsilicon on an insulating surface; forming an insulating film on saidsemiconductor film; selectively introducing an impurity comprising boroninto a selected portion of said semiconductor film through saidinsulating film by ion implantation; removing said insulating film afterthe introduction of said impurity; crystallizing said semiconductor filmafter the introduction of said impurity; patterning said semiconductorfilm into at least one first semiconductor island to form said firstP-channel thin film transistor and at least two second semiconductorislands to form said second P-channel thin film transistor, wherein oneof said two second semiconductor islands is included in said portion ofthe semiconductor film so that a channel region of said only one of thetwo second thin film transistors is doped with said boron while achannel region of the other one of the two second thin film transistoris not doped with said boron during the selective introduction.
 7. Themethod according to claim 6 wherein said insulating film has a thicknessof 1,000 to 3,000.
 8. The method according to claim 6 wherein saidsemiconductor device is a liquid crystal device.
 9. The method accordingto claim 6 wherein the crystallizing step is performed by laserirradiation.
 10. The method according to claim 6 wherein said impurityis introduced at a dose of 1×10¹³ to 2×10¹⁴ atoms/cm².
 11. A method ofmanufacturing a semiconductor device comprising at least one firstP-channel thin film transistor for switching a pixel electrode, and adriver circuit including at least two second P-channel thin filmtransistors for driving said first P-channel thin film transistor, saidmethod comprising: forming a semiconductor film comprising silicon on aninsulating surface; forming an insulating film on said semiconductorfilm; selectively introducing an impurity comprising boron into aselected portion of said semiconductor film through said insulatingfilm; removing said insulating film after the introduction of saidimpurity; patterning said semiconductor film into at least one firstsemiconductor island to form said first P-channel thin film transistorand at least two second semiconductor islands to form said secondP-channel thin film transistor, wherein one of said two secondsemiconductor islands is included in said portion of the semiconductorfilm so that a channel region of said only one of the two second thinfilm transistors is doped with said boron while a channel region of theother one of the two second thin film transistor is not doped with saidboron during the selective introduction.
 12. The method of claim 11wherein said impurity is introduced by ion doping or ion implantation.13. The method according to claim 11 wherein said insulating film has athickness of 1,000 to 3,000.
 14. The method according to claim 11wherein said semiconductor device is a liquid crystal device.
 15. Themethod according to claim 11 wherein at least one of the first P-channelthin film transistor and the two second P-channel thin film transistorshas an offset-gate.
 16. The method according to claim 11 wherein saidimpurity is introduced at a dose of 1×10¹³ to 2×10¹⁴ atoms/cm².
 17. Amethod of manufacturing a semiconductor device comprising at least onefirst P-channel thin film transistor for switching a pixel electrode,and a driver circuit including at least two second P-channel thin filmtransistors for driving said first P-channel thin film transistor, saidmethod comprising the steps of: forming a semiconductor film comprisingsilicon on an insulating surface over a substrate; forming an insulatingfilm on said semiconductor film; selectively introducing an impuritycomprising boron into a selected portion of said semiconductor filmthrough said insulating film; removing said insulating film after theintroduction of said impurity; crystallizing said semiconductor film;patterning said semiconductor film into at least one first semiconductorisland to form said first P-channel thin film transistor and at leasttwo second semiconductor islands to form said second P-channel thin filmtransistor; and mounting at least one of a correction memory chip, amemory chip, a CPU and an input port chip over the substrate, whereinone of said two second semiconductor islands is included in said portionof the semiconductor film so that a channel region of said only one ofthe two second thin film transistors is doped with said boron while achannel region of the other one of the two second thin film transistoris not doped with said boron during the selective introduction.
 18. Themethod according to claim 17 wherein said semiconductor film iscrystallized after the introduction of the impurity.
 19. The method ofclaim 17 wherein said impurity is introduced by ion doping or ionimplantation.
 20. The method according to claim 17 wherein saidinsulating film has a thickness of 1,000 to 3,000.
 21. The methodaccording to claim 17 wherein said semiconductor device is a liquidcrystal device.
 22. The method according to claim 17 wherein thecrystallizing step is performed by laser irradiation.
 23. The methodaccording to claim 17 wherein said impurity is introduced at a dose of1×10¹³ to 2×10¹⁴ atoms/cm².
 24. A method of manufacturing asemiconductor device comprising at least one first P-channel thin filmtransistor for switching a pixel electrode, and a driver circuitincluding at least two second P-channel thin film transistors fordriving said first P-channel thin film transistor, said methodcomprising the steps of: forming a semiconductor film comprising siliconon an insulating surface over a substrate; forming an insulating film onsaid semiconductor film; selectively introducing an impurity comprisingboron into a selected portion of said semiconductor film through saidinsulating film; removing said insulating film after the introduction ofsaid impurity; patterning said semiconductor film into at least onefirst semiconductor island to form said first P-channel thin filmtransistor and at least two second semiconductor islands to form saidsecond P-channel thin film transistor; and mounting at least one of acorrection memory chip, a memory chip, a CPU and an input port chip overthe substrate, wherein one of said two second semiconductor islands isincluded in said portion of the semiconductor film so that a channelregion of said only one of the two second thin film transistors is dopedwith said boron while a channel region of the other one of the twosecond thin film transistor is not doped with said boron during theselective introduction.
 25. The method of claim 24 wherein said impurityis introduced by ion doping or ion implantation.
 26. The methodaccording to claim 24 wherein said insulating film has a thickness of1,000 to 3,000.
 27. The method according to claim 24 wherein saidsemiconductor device is a liquid crystal device.
 28. The methodaccording to claim 24 wherein at least one of the first P-channel thinfilm transistor and the two second P-channel thin film transistors hasan offset-gate.
 29. The method according to claim 24 wherein saidimpurity is introduced at a dose of 1×10¹³ to 2×10¹⁴ atoms/cm².
 30. Amethod of manufacturing a semiconductor device comprising at least onefirst P-channel thin film transistor for switching a pixel electrode,and a driver circuit including at least two second P-channel thin filmtransistors for driving said first P-channel thin film transistor, saidmethod comprising the steps of: forming a semiconductor film comprisingsilicon on an insulating surface; forming an insulating film on saidsemiconductor film; selectively introducing an impurity comprising boroninto a selected portion of said semiconductor film through saidinsulating film; removing said insulating film after the introduction ofsaid impurity; crystallizing said semiconductor film; patterning saidsemiconductor film into at least one first semiconductor island to formsaid first P-channel thin film transistor and at least two secondsemiconductor islands to form said second P-channel thin filmtransistors; forming a gate insulating film over said at least one firstsemiconductor island, and said at least two second semiconductorislands; forming a gate electrode over each of the at least one firstsemiconductor island and the at least two second semiconductor islands;forming p-type regions in the at least one first semiconductor islandand the at least two semiconductor islands by introducing boron with thegate electrodes as a mask, wherein one of said two second semiconductorislands is included in said portion of the semiconductor film so that achannel region of said only one of the two second thin film transistorsis doped with said boron while a channel region of the other one of thetwo second thin film transistors is not doped with said boron during theselective introduction.
 31. The method according to claim 30 wherein atleast one of the first P-channel thin film transistor and the two secondP-channel thin film transistors has an offset-gate.
 32. The methodaccording to claim 30 wherein said semiconductor film is crystallizedafter the introduction of the impurity.
 33. The method of claim 30wherein said impurity is introduced by ion doping or ion implantation.34. The method according to claim 30 wherein said insulating film has athickness of 1,000 to 3,000.
 35. The method according to claim 30wherein said semiconductor device is a liquid crystal device.
 36. Themethod according to claim 30 wherein the crystallizing step is performedby laser irradiation.
 37. The method according to claim 30 wherein saidimpurity is introduced at a dose of 1×10¹³ to 2×10¹⁴ atoms/cm².
 38. Amethod of manufacturing a semiconductor device comprising at least onefirst P-channel thin film transistor for switching a pixel electrode,and a driver circuit including at least two second P-channel thin filmtransistors for driving said first P-channel thin film transistor, saidmethod comprising the steps of: forming a semiconductor film comprisingsilicon on an insulating surface over a substrate; forming an insulatingfilm on said semiconductor film; selectively introducing an impuritycomprising boron into a selected portion of said semiconductor filmthrough said insulating film; removing said insulating film after theintroduction of said impurity; patterning said semiconductor film intoat least one first semiconductor island to form said first P-channelthin film transistor and at least two second semiconductor islands toform said second P-channel thin film transistors; forming a gateinsulating film over said at least one first semiconductor island, andsaid at least two second semiconductor islands; forming a gate electrodeover each of the at least one first semiconductor island and the atleast two second semiconductor islands; forming p-type regions in the atleast one first semiconductor island and the at least two semiconductorislands by introducing boron with the gate electrodes as a mask, whereinone of said two second semiconductor islands is included in said portionof the semiconductor film so that a channel region of said only one ofthe two second thin film transistors is doped with said boron while achannel region of the other one of the two second thin film transistorsis not doped with said boron during the selective introduction.
 39. Themethod according to claim 38 wherein at least one of the first P-channelthin film transistor and the two second P-channel thin film transistorshas an offset-gate.
 40. The method of claim 38 wherein said impurity isintroduced by ion doping or ion implantation.
 41. The method accordingto claim 38 wherein said insulating film has a thickness of 1,000 to3,000.
 42. The method according to claim 38 wherein said semiconductordevice is a liquid crystal device.
 43. The method according to claim 6wherein at least one of the first P-channel thin film transistor and thetwo second P-channel thin film transistors has an offset-gate.
 44. Themethod according to claim 38 wherein said impurity is introduced at adose of 1×10¹³ to 2×10¹⁴ atoms/cm².
 45. The method according to claim 1wherein at least one of the first P-channel thin film transistor and thetwo second P-channel thin film transistors has an offset-gate.
 46. Themethod according to claim 17 wherein at least one of the first P-channelthin film transistor and the two second P-channel thin film transistorshas an offset-gate.